MMBTA28
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
Features
NEW PRODUCT
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Epitaxial Planar Die Construction
Ideal for Medium Power Amplification and
Switching
High Current Gain
Case: SOT-23, Molded Plastic
Case Material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking (See Page 2): K6R
Weight: 0.008 grams (approx.)
Ordering & Date Code Information: See Page 2
SOT-23
A
C
B
B
TOP VIEW
E
E
D
G
H
K
J
D
L
M
C
Dim
A
B
C
D
E
G
H
J
K
L
M
a
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0擄
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8擄
Mechanical Data
C
All Dimensions in mm
B
E
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
@ T
A
= 25擄C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
qJA
T
j
, T
STG
MMBTA28
80
80
12
500
300
417
-55 to +150
Unit
V
V
V
mA
mW
擄C/W
擄C
Characteristic
Collector Current - Continuous
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage and Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
Notes:
@ T
A
= 25擄C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)EBO
V
(BR)CEO
I
CBO
I
EBO
Min
80
12
80
戮
戮
10,000
10,000
戮
戮
Max
戮
戮
戮
100
100
Unit
V
V
V
nA
nA
Test Condition
I
C
= 100mA I
E
= 0
I
E
= 100mA I
C
= 0
I
C
= 100mA I
B
= 0
V
CB
= 60V, I
E
= 0
V
EB
= 10V, I
C
= 0
I
C
= 10mA, V
CE
= 5.0V
I
C
= 100mA, V
CE
= 5.0V
I
C
= 100mA, I
B
= 100mA
I
C
= 100mA, V
CE
= 5.0V
V
CB
= 10V, f = 1.0MHz, I
E
= 0
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
V
CE
= 5.0V, I
C
= 10mA,
f = 100MHz
h
FE
V
CE(SAT)
V
BE(SAT)
C
obo
C
ibo
f
T
戮
1.5
2.0
戮
V
V
pF
pF
MHz
8.0 Typical
15 Typical
125
戮
1. Device mounted on FR-4 PCB, 1.6x1.6x0.06 nch pad layout as shown on Diodes Inc. suggested pad layout
document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
DS30367 Rev. 2 - 2
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