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MMBTA20 Datasheet

  • MMBTA20

  • General Purpose Amplifier

  • 8頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBTA20LT1/D
General Purpose Amplifier
NPN Silicon
COLLECTOR
3
1
BASE
MMBTA20LT1
3
1
2
EMITTER
2
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Symbol
VCEO
VEBO
IC
Value
40
4.0
100
Unit
Vdc
Vdc
mAdc
CASE 318 鈥?08, STYLE 6
SOT鈥?23 (TO 鈥?236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥?5 Board(1)
TA = 25擄C
Derate above 25擄C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25擄C
Derate above 25擄C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
q
JA
PD
556
300
2.4
R
q
JA
TJ, Tstg
417
鈥?55 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
DEVICE MARKING
MMBTA20LT1 = 1C
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 100
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
1. FR鈥?5 = 1.0
0.75
2. Alumina = 0.4 0.3
V(BR)CEO
V(BR)EBO
ICBO
40
4.0
鈥?/div>
鈥?/div>
鈥?/div>
100
Vdc
Vdc
nAdc


0.062 in.
 
0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1

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