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MMBTA14 Datasheet

  • MMBTA14

  • NPN Darlington Amplifier Transistor

  • 4頁(yè)

  • MCC   MCC

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上傳產(chǎn)品規(guī)格書

PDF預(yù)覽

MCC
Features
  omponents
21201 Itasca Street Chatsworth

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MMBTA13
MMBTA14
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Operating And Storage Temperatures 鈥?5
O
C to 150
O
C
R
胃JA
is 556
O
C/W (Mounted on FR-5 PCB 1.0鈥漻0.75鈥漻0.062鈥?
Capable of 225mWatts of Power Dissipation
Marking Code: MMBTA13 ----K2D; MMBTA14 ---- 1N
NPN Darlington
Amplifier Transistor
SOT-23
A
D
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter Breakdown Voltage*
(I
C
=100uAdc, I
B
=0)
Collector-Base Breakdown Voltage
Em
itter-Base Breakdown Voltage
Collector Current-Continuous
Collector Cutoff Current
(V
CB
=30Vdc, I
E
=0)
Emitter Cutoff Current
(V
EB
=10Vdc, I
C
=0)
DC Current Gain*
(I
C
=10mAdc, V
CE
=5.0Vdc)
5000
10000
10000
20000
1.5
2.0
Vdc
Vdc
DIM
A
B
C
D
E
F
G
H
J
K
Min
30
30
10
300
Max
Units
Vdc
Vdc
Vdc
mAdc
F
E
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
C
I
CBO
I
EBO
C
B
100
100
nAdc
nAdc
G
K
H
J
Collector
Base
Emitter
DIMENSIONS
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
ON CHARACTERISTICS
h
FE
MMBTA13
MMBTA14
MMBTA13
MMBTA14
V
CE(sat)
V
BE(sat)
(I
C
=150mAdc, V
CE
=1.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=100mAdc, I
B
=0.1mAdc)
Base-Emitter Saturation Voltage
(I
C
=100mAdc,V
CE
=5.0Vdc)
Current Gain-Bandwidth Product
(I
C
=10mAdc, V
CE
=5.0Vdc, f=100MHz)
Output Capacitance
(V
CB
=10Vdc, I
E
=0, f=1.0MHz)
Input Capacitance
(V
BE
=0.5Vdc, I
C
=0, f=1.0MHz)
Delay Time
Rise Time
Storage Time
Fall Time
SMALL-SIGNAL CHARACTERISTICS
f
T
C
obo
C
ibo
125
8.0
15
10
25
225
60
MHz
pF
pF
ns
ns
ns
ns
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
SWITCHING CHARACTERISTICS
t
d
t
r
t
s
t
f
(V
CC
=30Vdc, V
BE
=0.5Vdc
I
C
=150mAdc, I
B1
=15mAdc)
(V
CC
=30Vdc, I
C
=150mAdc
I
B1
=I
B2
=15mAdc)
.037
.950
.037
.950
www.mccsemi.com

MMBTA14 產(chǎn)品屬性

  • 3,000

  • 分離式半導(dǎo)體產(chǎn)品

  • 晶體管(BJT) - 單路

  • -

  • NPN - 達(dá)林頓

  • 1.2A

  • 30V

  • 1.5V @ 100µA，100mA

  • -

  • 20000 @ 100mA，5V

  • 350mW

  • 125MHz

  • 表面貼裝

  • TO-236-3，SC-59，SOT-23-3

  • SOT-23-3

  • 帶卷 (TR)

  • MMBTA14FSMMBTA14FS-NDMMBTA14FSTR

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