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MCC

Features

l

l

l

l

Fast Switching Speed

 omponents

21201 Itasca Street Chatsworth



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MMBD4448

Surface Mount Package Ideally Suited for Automatic Insertion

For General Purpose Switching Applications

High Conductance

Surface Mount

Schottky Barrier

Switching Diode

350mW

Mechanical Data

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Case: SOT-23, Molded Plastic

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Terminals: Solderable per MIL-STD-202, Method 208

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Polarity: See Diagram

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Marking: KA3

A

D

SOT-23

Maximum Ratings @ 25 C Unless Otherwise Specified

o

C

B

Characteristic

Non-Repetitive Peak Reverse Volt.

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Forward Continuous Current(Note1)

Average Rectified Output Current

Non-Repetitive Peak @ t<=1.0s

Forward Surge Current @ t=1.0us

Power Dissipation(Note 1)

Thermal Resistance(Note 1)

Operation/Storage Temp. Range

Symbol

V

RM

V

RRM

V

RWM

V

R

V

R(RMS)

I

FM

Io

I

FSM

Pd

R

Tj, T

STG

Value

100

75

53

500

250

2

4

350

357

-55 to +150

Unit

V

V

V

mA

mA

A

A

mW

K/W

o

F

E

G

H

J

DIMENSIONS

INCHES

MIN

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

MM

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

.085

.37

C

Electrical Characteristics @ 25

o

C Unless Otherwise Specified

Charateristic

Maximum Forward

Voltage Drop

Symbol

V

F M

Min

0.62

-----

Max

0.72

0.855

1

1.25

2.5

Maximum Peak

Reverse Current

Junction Capacitance

Reverse Recovery Time

Cj

t

rr

-----

-----

I

RM

-----

50

30

25

4

4

uA

uA

uA

nA

pF

ns

V

Unit

Test Cond.

I

F

=5.0mA

I

F

=10mA

I

F

=100mA

I

F

=150mA

V

R

=75V

V

R

=75V Tj=150 C

V

R

=25V Tj=150 C

V

R

=20V

V

R

=0V, f=1.0MHz

o

o

DIM

A

B

C

D

E

F

G

H

J

K

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

Suggested Solder

Pad Layout

.031

.800

.035

.900

.079

2.000

inches

mm

.037

.950

.037

.950

Note

: 1. Valid provided that terminals are kept at ambient temperature

2. Trr Test Condition: IF=IR=10mA, Irr=0.1*IR, R=100 OHM

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