MMBD4148 / SE / CC / CA
MMBD4148 / SE / CC / CA
Connection Diagrams
3
3
4148
3
3 4148SE
5H
2
1
1
2
1
4148CC3
2NC
1
2
3 4148CA
MARKING
MMBD4148
5H MMBD4148CA D6
MMBD4148CC D5
MMBD4148SE D4
SOT-23
1
2
1
2
Small Signal Diodes
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
A
= 25擄C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
Value
100
200
1.0
2.0
-55 to +150
150
Units
V
mA
A
A
擄C
擄C
T
stg
T
J
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
Symbol
P
D
R
胃JA
Power Dissipation
Thermal Resistance, Junction to Ambient
Parameter
Value
350
357
Units
mW
擄C/W
Electrical Characteristics
Symbol
V
R
V
F
I
R
T
A
= 25擄C unless otherwise noted
Parameter
Breakdown Voltage
Forward Voltage
Reverse Current
Test Conditions
I
R
= 5.0
碌A
I
R
= 100
碌A
I
F
= 10 mA
V
R
= 20 V
V
R
= 20 V, T
A
= 150擄C
V
R
= 75 V
V
R
= 0, f = 1.0 MHz
I
F
= 10 mA, V
R
= 6.0 V,
I
RR
= 1.0 mA, R
L
= 100
鈩?/div>
Min
75
100
Max
Units
V
V
V
nA
碌A
碌A
pF
ns
1.0
25
50
5.0
4.0
4.0
C
T
t
rr
Total Capacitance
Reverse Recovery Time
錚?001
Fairchild Semiconductor Corporation
MMBD4148, Rev. C
1
2
