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MMBD301LT1 Datasheet

  • MMBD301LT1

  • SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES

  • 4頁

  • ONSEMI

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MBD301/D
Silicon Hot-Carrier Diodes
Schottky Barrier Diodes
These devices are designed primarily for high鈥揺fficiency UHF and VHF detector
applications. They are readily adaptable to many other fast switching RF and digital
applications. They are supplied in an inexpensive plastic package for low鈥揷ost,
high鈥搗olume consumer and industrial/commercial requirements. They are also
available in a Surface Mount package.
鈥?/div>
Extremely Low Minority Carrier Lifetime 鈥?15 ps (Typ)
鈥?/div>
Very Low Capacitance 鈥?1.5 pF (Max) @ VR = 15 V
鈥?/div>
Low Reverse Leakage 鈥?IR = 13 nAdc (Typ) MBD301, MMBD301
MBD301
MMBD301LT1
Motorola Preferred Devices
30 VOLTS
SILICON HOT鈥揅ARRIER
DETECTOR AND SWITCHING
DIODES
1
2
MAXIMUM RATINGS
(TJ = 125擄C unless otherwise noted)
MBD301
Rating
Reverse Voltage
Forward Power Dissipation
@ TA = 25擄C
Derate above 25擄C
Operating Junction
Temperature Range
Storage Temperature Range
Symbol
VR
PF
280
2.8
TJ
鈥?55 to +125
Tstg
鈥?55 to +150
擄C
200
2.0
mW
mW/擄C
擄C
MMBD301LT1
Value
30
Unit
Volts
CASE 182鈥?02, STYLE 1
(TO鈥?26AC)
2
CATHODE
1
ANODE
3
1
2
DEVICE MARKING
MMBD301LT1 = 4T
CASE 318 鈥?08, STYLE 8
SOT鈥?23 (TO 鈥?236AB)
3
CATHODE
1
ANODE
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage (IR = 10
碌A(chǔ))
Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1
Reverse Leakage (VR = 25 V) Figure 3
Forward Voltage (IF = 1.0 mAdc) Figure 4
Forward Voltage (IF = 10 mAdc) Figure 4
Symbol
V(BR)R
CT
IR
VF
VF
Min
30
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ
鈥?/div>
0.9
13
0.38
0.52
Max
鈥?/div>
1.5
200
0.45
0.6
Unit
Volts
pF
nAdc
Vdc
Vdc
NOTE: MMBD301LT1 is also available in bulk packaging. Use MMBD301L as the device title to order this device in bulk.
Thermal Clad is a registered trademark of the Berquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1997
1

MMBD301LT1 產(chǎn)品屬性

  • 10

  • 分離式半導體產(chǎn)品

  • RF 二極管

  • -

  • 肖特基 - 單

  • 30V

  • -

  • 1.5pF @ 15V，1MHz

  • -

  • 200mW

  • TO-236-3，SC-59，SOT-23-3

  • SOT-23-3（TO-236）

  • 剪切帶 (CT)

  • MMBD301LT1OSCT

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