MMBD1501/A / 1503/A / 1504/A / 1505/A
Discrete POWER & Signal
Technologies
MMBD1501/A / 1503/A / 1504/A / 1505/A
3
CONNECTION DIAGRAMS
3
1
11
2
1501
3
3
1503
1
2 NC
3
1
3
2
2
SOT-23
1
MMBD1501
MMBD1503
MMBD1504
MMBD1505
MARKING
11
MMBD1501A
13
MMBD1503A
14
MMBD1504A
15
MMBD1505A
1504
A11
A13
A14
A15
1505
1
2
1
2
High Conductance Low Leakage Diode
Sourced from Process 1L.
Absolute Maximum Ratings*
Symbol
W
IV
I
O
I
F
i
f
i
f(surge)
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
TA = 25擄C unless otherwise noted
Parameter
Value
180
200
600
700
1.0
2.0
-55 to +150
150
Units
V
mA
mA
mA
A
A
擄C
擄C
T
stg
T
J
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
Symbol
P
D
R
胃JA
TA = 25擄C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Max
MMBD1501/A/ 1503-1505/A*
350
2.8
357
Units
mW
mW/擄C
擄C/W
*
Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
茫
1997 Fairchild Semiconductor Corporation