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MLP1N06CL Datasheet

  • MLP1N06CL

  • VOLTAGE CLAMPED CURRENT LIMITING MOSFET

  • 6頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MLP1N06CL/D
SMARTDISCRETES
鈩?/div>
Internally Clamped, Current Limited
N鈥揅hannel Logic Level Power MOSFET
These SMARTDISCRETES devices feature current limiting for short circuit
protection, an integral gate鈥搕o鈥搒ource clamp for ESD protection and gate鈥搕o鈥揹rain
clamp for over鈥搗oltage protection. No additional gate series resistance is required
when interfacing to the output of a MCU, but a 40 k鈩?gate pulldown resistor is
recommended to avoid a floating gate condition.
The internal gate鈥搕o鈥搒ource and gate鈥搕o鈥揹rain clamps allow the devices to be
applied without use of external transient suppression components. The gate鈥搕o鈥?/div>
source clamp protects the MOSFET input from electrostatic gate voltage stresses
up to 2.0 kV. The gate鈥搕o鈥揹rain clamp protects the MOSFET drain from drain
avalanche stresses that occur with inductive loads. This unique design provides
voltage clamping that is essentially independent of operating temperature.
The MLP1N06CL is fabricated using Motorola鈥檚 SMARTDISCRETES technolo-
gy which combines the advantages of a power MOSFET output device with
on鈥揷hip protective circuitry. This approach offers an economical means for
providing additional functions that protect a power MOSFET in harsh automotive
and industrial environments. SMARTDISCRETES devices are specified over a
wide temperature range from 鈥?0擄C to 150擄C.
鈥?/div>
Temperature Compensated Gate鈥搕o鈥揇rain Clamp Limits Voltage Stress
Applied to the Device and Protects the Load From Overvoltage
鈥?/div>
Integrated ESD Diode Protection
鈥?/div>
Controlled Switching Minimizes RFI
鈥?/div>
Low Threshold Voltage Enables Interfacing Power Loads to Microprocessors
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Drain鈥搕o鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
Drain Current 鈥?Continuous
Drain Current
鈥?Single Pulse
Total Power Dissipation
Electrostatic Discharge Voltage (Human Body Model)
Operating and Storage Junction Temperature Range
Symbol
VDSS
VDGR
VGS
ID
IDM
PD
ESD
TJ, Tstg
Value
Clamped
Clamped
鹵10
Self鈥搇imited
1.8
40
2.0
鈥?0 to 150
Unit
Vdc
Vdc
Vdc
Adc
Watts
kV
擄C
MLP1N06CL
Motorola Preferred Device
VOLTAGE CLAMPED
CURRENT LIMITING
MOSFET
62 VOLTS (CLAMPED)
RDS(on) = 0.75 OHMS
D
R1
G
R2
S
G
D
S
THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering Purposes,
1/8鈥?from case
R
胃JC
R
胃JA
TL
3.12
62.5
260
擄C/W
擄C
CASE 221A鈥?6, Style 5
TO鈥?20AB
UNCLAMPED DRAIN鈥揟O鈥揝OURCE AVALANCHE CHARACTERISTICS
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy
(Starting TJ = 25擄C, ID = 2.0 A, L = 40 mH) (Figure 6)
SMARTDISCRETES is a trademark of Motorola, Inc.
EAS
80
mJ
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
漏
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1996
1

MLP1N06CL 產(chǎn)品屬性

  • 50

  • 集成電路 (IC)

  • PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 內(nèi)部開關(guān)

  • SMARTDISCRETES™

  • 低端

  • 非反相

  • 1

  • -

  • -

  • -

  • -

  • -50°C ~ 150°C

  • 通孔

  • TO-220-3

  • TO-220AB

  • 管件

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