M36WT864TF
M36WT864BF
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory
and 8 Mbit (512K x16) SRAM, Multiple Memory Product
PRODUCT PREVIEW
FEATURES SUMMARY
s
SUPPLY VOLTAGE
鈥?V
DDF
= 1.65V to 2.2V
鈥?V
DDS
= V
DDQF
= 2.7V to 3.3V
鈥?V
PPF
= 12V for Fast Program (optional)
s
s
s
SRAM
s
8 Mbit (512K x 16 bit)
s
s
s
s
s
EQUAL CYCLE and ACCESS TIMES: 70ns
LOW STANDBY CURRENT
LOW V
DDS
DATA RETENTION: 1.5V
TRI-STATE COMMON I/O
AUTOMATIC POWER DOWN
ACCESS TIME: 70, 85, 100ns
LOW POWER CONSUMPTION
ELECTRONIC SIGNATURE
鈥?Manufacturer Code: 20h
鈥?Top Device Code, M36WT864TF: 8810h
鈥?Bottom Device Code, M36WT864BF: 8811h
Figure 1. Packages
FLASH MEMORY
s
PROGRAMMING TIME
鈥?8碌s by Word typical for Fast Factory Program
鈥?Double/Quadruple Word Program option
鈥?Enhanced Factory Program options
s
FBGA
MEMORY BLOCKS
鈥?Multiple Bank Memory Array: 4 Mbit Banks
鈥?Parameter Blocks (Top or Bottom location)
Stacked LFBGA96 (ZA)
8 x 14mm
s
DUAL OPERATIONS
鈥?Program Erase in one Bank while Read in
others
鈥?No delay between Read and Write operations
s
BLOCK LOCKING
鈥?All blocks locked at Power up
鈥?Any combination of blocks can be locked
鈥?WP for Block Lock-Down
s
SECURITY
鈥?128 bit user programmable OTP cells
鈥?64 bit unique device number
鈥?One parameter block permanently lockable
s
s
COMMON FLASH INTERFACE (CFI)
100,000 PROGRAM/ERASE CYCLES per
BLOCK
July 2002
This is preliminary information on a new product now in development. Details are subject to change without notice.
1/92