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M36W832TE-ZAT Datasheet

  • M36W832TE-ZAT

  • 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x1...

  • 64頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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M36W832TE
M36W832BE
32 Mbit (2Mb x16, Boot Block) Flash Memory
and 8 Mbit (512Kb x16) SRAM, Multiple Memory Product
FEATURES SUMMARY
s
SUPPLY VOLTAGE
鈥?V
DDF
= 2.7V to 3.3V
鈥?V
DDS
= V
DDQF
= 2.7V to 3.3V
鈥?V
PPF
= 12V for Fast Program (optional)
s
s
s
Figure 1. Packages
ACCESS TIMES: 70ns and 85ns
LOW POWER CONSUMPTION
ELECTRONIC SIGNATURE
鈥?Manufacturer Code: 20h
鈥?Top Device Code, M36W832TE: 88BAh
鈥?Bottom Device Code, M36W832BE: 88BBh
Stacked LFBGA66 (ZA)
12 x 8mm
FBGA
FLASH MEMORY
s
32 Mbit (2Mb x16) BOOT BLOCK
鈥?8 x 4 KWord Parameter Blocks (Top or
Bottom Location)
s
PROGRAMMING TIME
鈥?10碌s typical
鈥?Double Word Programming Option
鈥?Quadruple Word Programming Option
SRAM
s
8 Mbit (512Kb x 16)
s
s
s
s
BLOCK LOCKING
鈥?All blocks locked at Power up
鈥?Any combination of blocks can be locked
鈥?WPF for Block Lock-Down
ACCESS TIME: 70ns
LOW V
DDS
DATA RETENTION: 1.5V
POWER DOWN FEATURES USING TWO
CHIP ENABLE INPUTS
s
s
s
AUTOMATIC STANDBY MODE
PROGRAM and ERASE SUSPEND
100,000 PROGRAM/ERASE CYCLES per
BLOCK
COMMON FLASH INTERFACE
SECURITY
鈥?128 bit user programmable OTP cells
鈥?64 bit unique device identifier
s
s
May 2003
1/64

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