M36W108T120ZN5T Datasheet

IC型號：
M36W108T120ZN5T
PDF描述：
8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 S...
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248.22KB
PDF頁數(shù)：
35頁
芯片廠家：
STMICROELECTRONICS

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M36W108T

M36W108B

8 Mbit (1Mb x8, Boot Block) Flash Memory and

1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product

NOT FOR NEW DESIGN

M36W108T and M36W108B are replaced

respectively by the M36W108AT and

M36W108AB

SUPPLY VOLTAGE

鈥?V

CCF

= V

CCS

= 2.7V to 3.6V: for Program,

Erase and Read

BGA

LGA

ACCESS TIME: 100ns

LOW POWER CONSUMPTION

鈥?Read: 40mA max. (SRAM chip)

鈥?Stand-by: 30碌A(chǔ) max. (SRAM chip)

鈥?Read: 10mA max. (Flash chip)

鈥?Stand-by: 100碌A(chǔ) max. (Flash chip)

LBGA48 (ZM)

6 x 8 solder balls

LGA48 (ZN)

6 x 8 solder lands

FLASH MEMORY

8 Mbit (1Mb x 8) BOOT BLOCK ERASE

Figure 1. Logic Diagram

PROGRAMMING TIME: 10碌s typical

PROGRAM/ERASE CONTROLLER (P/E.C.)

鈥?Program Byte-by-Byte

鈥?Status Register bits and Ready/Busy Output

VCCF VCCS

MEMORY BLOCKS

鈥?Boot Block (Top or Bottom location)

鈥?Parameter and Main Blocks

A0-A19

E1S

E2S

M36W108T

M36W108B

DQ0-DQ7

BLOCK, MULTI-BLOCK and CHIP ERASE

ERASE SUSPEND and RESUME MODES

鈥?Read and Program another Block during

Erase Suspend

100,000 PROGRAM/ERASE CYCLES per

BLOCK

ELECTRONIC SIGNATURE

鈥?Manufacturer Code: 20h

鈥?Device Code, M36W108T: D2h

鈥?Device Code, M36W108B: DCh

SRAM

1 Mbit (128Kb x 8)

VSS

AI02509

POWER DOWN FEATURES USING TWO

CHIP ENABLE INPUTS

LOW V

DATA RETENTION: 2V

1/35

May 1999

This is information on a product still in production but not recommended for new designs.

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英文版

8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 S...

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英文版

8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 S...

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M36W108B

英文版

8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 S...

STMICROELECTRON...

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英文版

8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 S...

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英文版

8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 S...

STMICROELECTRON...

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STMICROELECTRON...

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M36W108T120ZN5T Datasheet

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