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Figure 1. Packages
2.5 to 5.5V Single Supply Voltage:
Hardware Write Control of the top half of
memory (addresses 100h to 1FFh)
BYTE and PAGE WRITE (up to 16 Bytes)
RANDOM and SEQUENTIAL READ Modes
Self-Timed Programming Cycle
Automatic Address Incrementing
Enhanced ESD/Latch-Up Behavior
More than 1 Million Erase/Write Cycles
More than 40 Year Data Retention
SO8 (MN)
150 mil width
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8
1
January 2004
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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