M29W800DB45M1F Datasheet

IC型號：
M29W800DB45M1F
PDF描述：
8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply...
文件大小：
1105.62KB
PDF頁數(shù)：
52頁
芯片廠家：
NUMONYX

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M29W800DT

M29W800DB

8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block)

3 V supply flash memory

Features

鈻?/div>

Supply voltage

鈥?V

= 2.7 V to 3.6 V for program, erase and

read

Access times: 45, 70, 90 ns

Programming time

鈥?10 碌s per byte/word typical

19 memory blocks

鈥?1 boot block (top or bottom location)

鈥?2 parameter and 16 main blocks

Program/erase controller

鈥?Embedded byte/word program algorithms

Erase suspend and resume modes

鈥?Read and program another block during

erase suspend

Unlock bypass program command

鈥?Faster production/batch programming

Temporary block unprotection mode

Common flash interface

鈥?64-bit security code

Low power consumption

鈥?Standby and automatic standby

100,000 program/erase cycles per block

Electronic signature

鈥?Manufacturer code: 0020h

鈥?Top device code M29W800DT: 22D7h

鈥?Bottom device code M29W800DB: 225Bh

TFBGA48 (ZE)

6 x 8 mm

TSOP48 (N)

12 x 20 mm

鈻?/div>

SO44 (M)

鈻?/div>

FBGA

鈻?/div>

March 2008

Rev 10

1/52

www.numonyx.com

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M29W800DB45M1F Datasheet

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