鈻?/div>
SUPPLY VOLTAGE
鈥?V
CC
= 2.7V to 3.6V for Program, Erase
and Read
ACCESS TIMES: 45, 70, 90ns
PROGRAMMING TIME
鈥?10碌s per Byte/Word typical
19 MEMORY BLOCKS
鈥?1 Boot Block (Top or Bottom Location)
鈥?2 Parameter and 16 Main Blocks
PROGRAM/ERASE CONTROLLER
鈥?Embedded Byte/Word Program
algorithms
ERASE SUSPEND and RESUME MODES
鈥?Read and Program another Block during
Erase Suspend
UNLOCK BYPASS PROGRAM COMMAND
鈥?Faster Production/Batch Programming
TEMPORARY BLOCK UNPROTECTION
MODE
COMMON FLASH INTERFACE
鈥?64 bit Security Code
LOW POWER CONSUMPTION
鈥?Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
鈥?Manufacturer Code: 0020h
鈥?Top Device Code M29W800DT: 22D7h
鈥?Bottom Device Code M29W800DB:
225Bh
Figure 1. Packages
SO44 (M)
TSOP48 (N)
12 x 20mm
FBGA
TFBGA48 (ZA)
6 x 9 mm
FBGA
TFBGA48 (ZE)
6 x 8mm
September 2004
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