M29W800AT
M29W800AB
8 Mbit (1Mb x8 or 512Kb x16, Boot Block)
Low Voltage Single Supply Flash Memory
s
2.7V to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
ACCESS TIME: 80ns
PROGRAMMING TIME: 10碌s typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
鈥?Program Byte-by-Byte or Word-by-Word
鈥?Status Register bits and Ready/Busy Output
1
44
s
s
s
s
s
s
SECURITY PROTECTION MEMORY AREA
INSTRUCTION ADDRESS CODING: 3 digits
MEMORY BLOCKS
鈥?Boot Block (Top or Bottom location)
鈥?Parameter and Main blocks
TSOP48 (N)
12 x 20mm
SO44 (M)
FBGA
s
s
BLOCK, MULTI-BLOCK and CHIP ERASE
MULTI BLOCK PROTECTION/TEMPORARY
UNPROTECTION MODES
ERASE SUSPEND and RESUME MODES
鈥?Read and Program another Block during
Erase Suspend
LFBGA48 (ZA)
8 x 6 solder balls
s
Figure 1. Logic Diagram
s
LOW POWER CONSUMPTION
鈥?Stand-by and Automatic Stand-by
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
鈥?Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
鈥?Manufacturer Code: 20h
鈥?Top Device Code, M29W800AT: D7h
鈥?Bottom Device Code, M29W800AB: 5Bh
A0-A18
W
E
G
RP
VCC
s
19
15
DQ0-DQ14
DQ15A鈥?
M29W800AT
M29W800AB
BYTE
RB
s
s
VSS
AI02599
March 2000
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