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M29W641DL12ZA6F Datasheet

  • M29W641DL12ZA6F

  • 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory

  • 42頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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M29W641DH, M29W641DL
M29W641DU
64 Mbit (4Mb x16, Uniform Block)
3V Supply Flash Memory
PRODUCT PREVIEW
FEATURES SUMMARY
s
SUPPLY VOLTAGE
鈥?V
CC
= 2.7V to 3.6V Core Power Supply
鈥?V
CCQ
= 1.8V to 3.6V for Input/Output
鈥?V
PP
=12 V for Fast Program (optional)
s
s
Figure 1. Packages
ACCESS TIME: 70, 90, 100 and 120ns
PROGRAMMING TIME
鈥?10 碌s typical
鈥?Double Word Program option
s
s
128 UNIFORM, 32-KWord MEMORY BLOCKS
PROGRAM/ERASE CONTROLLER
鈥?Embedded Program and Erase algorithms
ERASE SUSPEND and RESUME MODES
鈥?Read and Program another Block during
Erase Suspend
TSOP48 (N)
12 x 20mm
s
s
UNLOCK BYPASS PROGRAM COMMAND
鈥?Faster Production/Batch Programming
WRITE PROTECT OPTIONS
FBGA
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鈥?M29W641DH: WP Pin for Write Protection of
Highest Address Block
鈥?M29W641DL: WP Pin for Write Protection of
Lowest Address Block
鈥?M29W641DU: No Write Protection
s
TEMPORARY BLOCK UNPROTECTION
MODE
s
s
TFBGA63 (ZA)
7 x 11mm
COMMON FLASH INTERFACE
EXTENDED MEMORY BLOCK
鈥?Extra block used as security block or to store
additional information
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LOW POWER CONSUMPTION
鈥?Standby and Automatic Standby
ELECTRONIC SIGNATURE
鈥?Manufacturer Code: 0020h
鈥?Device Code M29W641D: 22C7h
s
April 2003
This is preliminary information on a new product now in development. Details are subject to change without notice.
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