鈻?/div>
SUPPLY VOLTAGE
鈥?V
CC
= 2.7V to 3.6V for Program, Erase,
Read
鈥?V
PP
=12 V for Fast Program (optional)
ACCESS TIME: 90 ns
PROGRAMMING TIME
鈥?10 碌s per Byte/Word typical
鈥?Double Word Programming Option
135 MEMORY BLOCKS
鈥?1 Boot Block and 7 Parameter Blocks,
8 KBytes each (Top or Bottom Location)
鈥?127 Main Blocks, 64 KBytes each
PROGRAM/ERASE CONTROLLER
鈥?Embedded Byte/Word Program
algorithms
ERASE SUSPEND and RESUME MODES
鈥?Read and Program another Block during
Erase Suspend
UNLOCK BYPASS PROGRAM COMMAND
鈥?Faster Production/Batch Programming
V
PP
/WP Pin for FAST PROGRAM and WRITE
PROTECT
TEMPORARY BLOCK UNPROTECTION
MODE
COMMON FLASH INTERFACE
鈥?64-bit Security Code
EXTENDED MEMORY BLOCK
鈥?Extra block used as security block or to
store additional information
LOW POWER CONSUMPTION
鈥?Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
鈥?Manufacturer Code: 0020h
鈥?Top Device Code M29W640DT: 22DEh
鈥?Bottom Device Code M29W640DB:
22DFh
Figure 1. Packages
TSOP48 (N)
12 x 20mm
FBGA
TFBGA63 (ZA)
63 ball array
December 2004
1/49