M29W400DT
M29W400DB
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)
3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY
s
SUPPLY VOLTAGE
鈥?V
CC
= 2.7V to 3.6V for Program, Erase and
Read
s
s
Figure 1. Packages
ACCESS TIME: 45, 55, 70ns
PROGRAMMING TIME
鈥?10碌s per Byte/Word typical
11 MEMORY BLOCKS
鈥?1 Boot Block (Top or Bottom Location)
鈥?2 Parameter and 8 Main Blocks
SO44 (M)
s
s
PROGRAM/ERASE CONTROLLER
鈥?Embedded Byte/Word Program algorithms
ERASE SUSPEND and RESUME MODES
鈥?Read and Program another Block during
Erase Suspend
TSOP48 (N)
12 x 20mm
s
s
UNLOCK BYPASS PROGRAM COMMAND
鈥?Faster Production/Batch Programming
TEMPORARY BLOCK UNPROTECTION
MODE
LOW POWER CONSUMPTION
鈥?Standby and Automatic Standby
s
s
TFBGA48 (ZA)
6 x 9mm
s
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
鈥?Manufacturer Code: 0020h
鈥?Top Device Code M29W400DT: 00EEh
鈥?Bottom Device Code M29W400DB: 00EFh
s
February 2003
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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