M29W400DT45ZA1 Datasheet

IC型號(hào)：
M29W400DT45ZA1
PDF描述：
4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Fl...
文件大?。?/label>
1025.84KB
PDF頁數(shù)：
48頁
芯片廠家：
NUMONYX

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M29W400DT

M29W400DB

4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block)

3 V supply Flash memory

Features

鈻?/div>

Supply voltage

鈥?V

= 2.7 V to 3.6 V for Program, Erase

and Read

Access time: 45, 55, 70 ns

Programming time

鈥?10 碌s per byte/word typical

11 memory blocks

鈥?1 boot block (top or bottom location)

鈥?2 parameter and 8 main blocks

Program/Erase controller

鈥?Embedded byte/word program algorithms

Erase Suspend and Resume modes

鈥?Read and Program another block during

Erase Suspend

Unlock bypass program command

鈥?Faster production/batch programming

Temporary block unprotection mode

Low power consumption

鈥?Standby and Automatic Standby

100,000 Program/Erase cycles per block

Electronic signature

鈥?Manufacturer code: 0020h

鈥?Top device code M29W400DT: 00EEh

鈥?Bottom device code M29W400DB: 00EFh

鈥?ECOPACK

廬

packages

FBGA

鈻?/div>

SO44 (M)

(1)

TSOP48 (N)

12 x 20 mm

鈻?/div>

FBGA

TFBGA48 (ZA)

(1)

6 x 9 mm

鈻?/div>

TFBGA48 (ZE)

6 x 8 mm

1. These packages are no more in mass production.

December 2007

Rev 6

1/48

www.numonyx.com

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M29W400DT45ZA1 Datasheet

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