M29W400BT
M29W400BB
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)
Low Voltage Single Supply Flash Memory
s
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
ACCESS TIME: 55ns
PROGRAMMING TIME
鈥?10碌s per Byte/Word typical
11 MEMORY BLOCKS
鈥?1 Boot Block (Top or Bottom Location)
鈥?2 Parameter and 8 Main Blocks
44
s
s
s
s
PROGRAM/ERASE CONTROLLER
鈥?Embedded Byte/Word Program algorithm
鈥?Embedded Multi-Block/Chip Erase algorithm
鈥?Status Register Polling and Toggle Bits
鈥?Ready/Busy Output Pin
1
TSOP48 (N)
12 x 20mm
SO44 (M)
s
ERASE SUSPEND and RESUME MODES
鈥?Read and Program another Block during
Erase Suspend
Figure 1. Logic Diagram
s
UNLOCK BYPASS PROGRAM COMMAND
鈥?Faster Production/Batch Programming
TEMPORARY BLOCK UNPROTECTION
MODE
LOW POWER CONSUMPTION
鈥?Standby and Automatic Standby
18
A0-A17
W
E
G
RP
M29W400BT
M29W400BB
15
DQ0-DQ14
DQ15A鈥?
BYTE
RB
VCC
s
s
s
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
鈥?Defectivity below 1 ppm/year
ELECTRONIC SIGNATURE
鈥?Manufacturer Code: 0020h
鈥?Top Device Code M29W400BT: 00EEh
鈥?Bottom Device Code M29W400BB: 00EFh
s
s
VSS
AI02934
April 2000
1/22