M29W400T
M29W400B
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)
Low Voltage Single Supply Flash Memory
NOT FOR NEW DESIGN
M29W400T and M29W400B are replaced
respectively by the M29W400BT and
M29W400BB
2.7V to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
FAST ACCESS TIME: 90ns
FAST PROGRAMMING TIME
鈥?10碌s by Byte / 16碌s by Word typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
鈥?Program Byte-by-Byte or Word-by-Word
鈥?Status Register bits and Ready/Busy Output
MEMORY BLOCKS
鈥?Boot Block (Top or Bottom location)
鈥?Parameter and Main blocks
BLOCK, MULTI-BLOCK and CHIP ERASE
MULTI BLOCK PROTECTION/TEMPORARY
UNPROTECTION MODES
ERASE SUSPEND and RESUME MODES
鈥?Read and Program another Block during
Erase Suspend
LOW POWER CONSUMPTION
鈥?Stand-by and Automatic Stand-by
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
鈥?Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
鈥?Manufacturer Code: 0020h
鈥?Device Code, M29W400T: 00EEh
鈥?Device Code, M29W400B: 00EFh
DESCRIPTION
The M29W400 is a non-volatile memory that may
be erased electrically at the block or chip level and
programmed in-system on a Byte-by-Byteor Word-
by-Word basis using only a single 2.7V to 3.6V V
CC
supply. For Program and Erase operations the
necessary high voltages are generated internally.
The device can also be programmed in standard
programmers.
The array matrix organisation allows each block to
be erased and reprogrammed without affecting
other blocks. Blocks can be protected against pro-
graming and erase on programming equipment,
November 1999
44
1
TSOP48 (N)
12 x 20 mm
SO44 (M)
BGA
FBGA48 (ZA)
8 x 6 solder balls
Figure 1. Logic Diagram
VCC
18
A0-A17
W
E
G
RP
M29W400T
M29W400B
15
DQ0-DQ14
DQ15A鈥?
BYTE
RB
VSS
AI02065
1/34
This is information on a product still in productionbut not recommended for new designs.