M29W160DT
M29W160DB
16 Mbit (2Mb x8 or 1Mb x16, Boot Block)
3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY
s
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
s
s
Figure 1. Packages
ACCESS TIME: 70ns
PROGRAMMING TIME
鈥?10碌s per Byte/Word typical
44
s
35 MEMORY BLOCKS
鈥?1 Boot Block (Top or Bottom Location)
鈥?2 Parameter and 32 Main Blocks
1
s
PROGRAM/ERASE CONTROLLER
鈥?Embedded Program and Erase algorithms
ERASE SUSPEND and RESUME MODES
鈥?Read and Program another Block during
Erase Suspend
TSOP48 (N)
12 x 20mm
SO44 (M)
s
FBGA
s
UNLOCK BYPASS PROGRAM COMMAND
鈥?Faster Production/Batch Programming
TEMPORARY BLOCK UNPROTECTION
MODE
SECURITY MEMORY BLOCK
LOW POWER CONSUMPTION
鈥?Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
鈥?Manufacturer Code: 0020h
鈥?Top Device Code M29W160DT: 22C4h
鈥?Bottom Device Code M29W160DB: 2249h
LFBGA48 (ZA)
8 x 6 solder balls
s
s
s
s
s
January 2001
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/29