M29W102BT
M29W102BB
1 Mbit (64Kb x16, Boot Block)
Low Voltage Single Supply Flash Memory
s
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
ACCESS TIME: 50ns
PROGRAMMING TIME
鈥?10碌s per Word typical
5 MEMORY BLOCKS
鈥?1 Boot Block (Top or Bottom Location)
鈥?2 Parameter and 2 Main Blocks
s
s
s
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PROGRAM/ERASE CONTROLLER
鈥?Embedded Word Program algorithm
鈥?Embedded Multi-Block/Chip Erase algorithm
鈥?Status Register Polling and Toggle Bits
TSOP40 (N)
10 x 14mm
s
ERASE SUSPEND and RESUME MODES
鈥?Read and Program another Block during
Erase Suspend
Figure 1. Logic Diagram
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UNLOCK BYPASS PROGRAM COMMAND
鈥?Faster Production/Batch Programming
VCC
s
TEMPORARY BLOCK UNPROTECTION
MODE
LOW POWER CONSUMPTION
鈥?Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
M28F102 COMPATIBLE
鈥?Pin-out and Read Mode
20 YEARS DATA RETENTION
鈥?Defectivity below 1 ppm/year
ELECTRONIC SIGNATURE
鈥?Manufacturer Code: 0020h
鈥?Top Device Code M29W102BT: 0099h
鈥?Bottom Device Code M29W102BB: 0098h
A0-A15
W
E
G
RP
16
16
DQ0-DQ15
s
s
s
M29W102BT
M29W102BB
s
s
VSS
AI02785
March 2000
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