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M29W040-100NZ6TR Datasheet

  • M29W040-100NZ6TR

  • 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Fla...

  • 31頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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M29W040
4 Mbit (512Kb x8, Uniform Block)
Low Voltage Single Supply Flash Memory
NOT FOR NEW DESIGN
M29W040 is replaced by the M29W040B
2.7V to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
FAST ACCESS TIME: 100ns
BYTE PROGRAMMING TIME: 12碌s typical
ERASE TIME
鈥?Block: 1.5 sec typical
鈥?Chip: 2.5 sec typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
鈥?Program Byte-by-Byte
鈥?Data Polling and Toggle bits Protocol for
P/E.C. Status
MEMORY ERASE in BLOCKS
鈥?8 Uniform Blocks of 64 KBytes each
鈥?Block Protection
鈥?Multiblock Erase
ERASE SUSPEND and RESUME MODES
LOW POWER CONSUMPTION
鈥?Read mode: 8mA typical (at 12MHz)
鈥?Stand-by mode: 20碌A(chǔ) typical
鈥?Automatic Stand-by mode
POWER DOWN SOFTWARE COMMAND
鈥?Power-down mode: 1碌A(chǔ) typical
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
鈥?Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
鈥?Manufacturer Code: 20h
鈥?Device Code: E3h
Table 1. Signal Names
A0-A18
DQ0-DQ7
E
G
W
V
CC
V
SS
Address Inputs
Data Input / Outputs
Chip Enable
Output Enable
Write Enable
Supply Voltage
Ground
PLCC32 (K)
TSOP32 (N)
8 x 20mm
TSOP32 (NZ)
8 x 14mm
Figure 1. Logic Diagram
VCC
19
A0-A18
8
DQ0-DQ7
W
E
G
M29W040
VSS
AI02074
November 1999
This is information on a product still in productionbut not recommended for new designs.
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