M29W040B
4 Mbit (512Kb x8, Uniform Block)
Low Voltage Single Supply Flash Memory
s
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
ACCESS TIME: 55ns
PROGRAMMING TIME
鈥?10碌s per Byte typical
8 UNIFORM 64 Kbytes MEMORY BLOCKS
PROGRAM/ERASE CONTROLLER
鈥?Embedded Byte Program algorithm
鈥?Embedded Multi-Block/Chip Erase algorithm
鈥?Status Register Polling and Toggle Bits
PLCC32 (K)
TSOP32 (N)
8 x 20mm
s
s
s
s
s
ERASE SUSPEND and RESUME MODES
鈥?Read and Program another Block during
Erase Suspend
TSOP32 (NZ)
8 x 14mm
s
UNLOCK BYPASS PROGRAM COMMAND
鈥?Faster Production/Batch Programming
LOW POWER CONSUMPTION
鈥?Standby and Automatic Standby
s
Figure 1. Logic Diagram
s
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
鈥?Defectivity below 1 ppm/year
VCC
s
s
ELECTRONIC SIGNATURE
鈥?Manufacturer Code: 20h
鈥?Device Code: E3h
A0-A18
19
8
DQ0-DQ7
W
E
G
M29W040B
VSS
AI02953
April 2002
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