M29W022BT
M29W022BB
2 Mbit (256Kb x8, Boot Block)
Low Voltage Single Supply Flash Memory
s
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
ACCESS TIME: 55ns
PROGRAMMING TIME
鈥?10碌s by Byte typical
7 MEMORY BLOCKS
鈥?1 Boot Block (Top or Bottom Location)
鈥?2 Parameter and 4 Main Blocks
s
s
s
s
PROGRAM/ERASE CONTROLLER
鈥?Embedded Byte Program algorithm
鈥?Embedded Multi-Block/Chip Erase algorithm
鈥?Status Register Polling and Toggle Bits
TSOP32 (NZ)
8 x 14mm
PLCC32 (K)
s
ERASE SUSPEND and RESUME MODES
鈥?Read and Program another Block during
Erase Suspend
s
UNLOCK BYPASS PROGRAM COMMAND
鈥?Faster Production/Batch Programming
LOW POWER CONSUMPTION
鈥?Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
鈥?Defectivity below 1 ppm/year
ELECTRONIC SIGNATURE
鈥?Manufacturer Code: 20h
鈥?Top Device Code M29W022BT: C4h
鈥?Bottom Device Code M29W022BB: C3h
Figure 1. Logic Diagram
s
VCC
s
18
A0-A17
8
DQ0-DQ7
s
s
W
E
G
M29W022BT
M29W022BB
VSS
AI02971
March 2000
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