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M29F800AT

M29F800AB

8 Mbit (1Mb x8 or 512Kb x16, Boot Block)

Single Supply Flash Memory

PRELIMINARY DATA

s

SINGLE 5V鹵10% SUPPLY VOLTAGE for

PROGRAM, ERASE and READ OPERATIONS

ACCESS TIME: 70ns

PROGRAMMING TIME

鈥?8碌s per Byte/Word typical

19 MEMORY BLOCKS

鈥?1 Boot Block (Top or Bottom Location)

鈥?2 Parameter and 16 Main Blocks

1

44

s

s

s

s

PROGRAM/ERASE CONTROLLER

鈥?Embedded Byte/Word Program algorithm

鈥?Embedded Multi-Block/Chip Erase algorithm

鈥?Status Register Polling and Toggle Bits

鈥?Ready/Busy Output Pin

TSOP48 (N)

12 x 20mm

SO44 (M)

s

ERASE SUSPEND and RESUME MODES

鈥?Read and Program another Block during

Erase Suspend

Figure 1. Logic Diagram

s

TEMPORARY BLOCK UNPROTECTION

MODE

LOW POWER CONSUMPTION

鈥?Standby and Automatic Standby

19

A0-A18

W

E

G

RP

VCC

s

15

DQ0-DQ14

DQ15A鈥?

M29F800AT

M29F800AB

BYTE

RB

s

100,000 PROGRAM/ERASE CYCLES per

BLOCK

20 YEARS DATA RETENTION

鈥?Defectivity below 1 ppm/year

ELECTRONIC SIGNATURE

鈥?Manufacturer Code: 0020h

鈥?M29F800AT Device Code: 00ECh

鈥?M29F800AB Device Code: 0058h

s

s

VSS

AI02198B

January 2000

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

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