M29F160BT
M29F160BB
16 Mbit (2Mb x8 or 1Mb x16, Boot Block)
Single Supply Flash Memory
PRELIMINARY DATA
s
SINGLE 5V鹵10% SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
ACCESS TIME: 55ns
PROGRAMMING TIME
鈥?8碌s per Byte/Word typical
35 MEMORY BLOCKS
鈥?1 Boot Block (Top or Bottom Location)
鈥?2 Parameter and 32 Main Blocks
s
s
s
s
PROGRAM/ERASE CONTROLLER
鈥?Embedded Byte/Word Program algorithm
鈥?Embedded Multi-Block/Chip Erase algorithm
鈥?Status Register Polling and Toggle Bits
鈥?Ready/Busy Output Pin
TSOP48 (N)
12 x 20mm
s
ERASE SUSPEND and RESUME MODES
鈥?Read and Program another Block during
Erase Suspend
Figure 1. Logic Diagram
s
UNLOCK BYPASS PROGRAM COMMAND
鈥?Faster Production/Batch Programming
TEMPORARY BLOCK UNPROTECTION
MODE
LOW POWER CONSUMPTION
鈥?Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
鈥?Defectivity below 1 ppm/year
ELECTRONIC SIGNATURE
鈥?Manufacturer Code: 0020h
鈥?Top Device Code M29F160BT: 22CCh
鈥?Bottom Device Code M29F160BB: 224Bh
A0-A19
W
E
G
RP
VCC
s
20
15
DQ0-DQ14
DQ15A鈥?
M29F160BT
M29F160BB
BYTE
RB
s
s
s
s
VSS
AI02920
March 2000
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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