鈻?/div>
SINGLE 5V鹵10% SUPPLY VOLTAGE for
PROGRAM, ERASE and READ
OPERATIONS
ACCESS TIME: 35ns
PROGRAMMING TIME
鈥?8碌s per Word typical
5 MEMORY BLOCKS
鈥?1 Boot Block (Bottom Location)
鈥?2 Parameter and 2 Main Blocks
PROGRAM/ERASE CONTROLLER
鈥?Embedded Word Program algorithm
鈥?Embedded Multi-Block/Chip Erase
algorithm
鈥?Status Register Polling and Toggle Bits
ERASE SUSPEND and RESUME MODES
鈥?Read and Program another Block during
Erase Suspend
UNLOCK BYPASS PROGRAM COMMAND
鈥?Faster Production/Batch Programming
TEMPORARY BLOCK UNPROTECTION
MODE
LOW POWER CONSUMPTION
鈥?Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
M28F102 COMPATIBLE
鈥?Pin-out and Read Mode
20 YEARS DATA RETENTION
鈥?Defectivity below 1 ppm/year
ELECTRONIC SIGNATURE
鈥?Manufacturer Code: 0020h
鈥?Bottom Device Code M29F102BB: 0097h
PACKAGES
鈥?Compliant with Lead-Free Soldering
Processes
鈥?Lead-Free Versions
Figure 1. Package
PLCC44 (K)
TSOP40 (N)
10 x 14mm
November 2004
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