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M29F016B

16 Mbit (2Mb x8, Uniform Block) Single Supply Flash Memory

s

SINGLE 5V鹵10% SUPPLY VOLTAGE for

PROGRAM, ERASE and READ OPERATIONS

ACCESS TIME: 55ns

PROGRAMMING TIME

鈥?8碌s by Byte typical

44

s

s

s

s

32 UNIFORM 64 Kbyte MEMORY BLOCKS

PROGRAM/ERASE CONTROLLER

鈥?Embedded Byte Program algorithm

鈥?Embedded Multi-Block/Chip Erase algorithm

鈥?Status Register Polling and Toggle Bits

鈥?Ready/Busy Output Pin

TSOP40 (N)

10 x 20mm

SO44 (M)

1

s

ERASE SUSPEND and RESUME MODES

鈥?Read and Program another Block during

Erase Suspend

Figure 1. Logic Diagram

s

TEMPORARY BLOCK UNPROTECTION

MODE

UNLOCK BYPASS PROGRAM COMMAND

鈥?Faster Production/Batch Programming

LOW POWER CONSUMPTION

鈥?Standby and Automatic Standby

21

A0-A20

W

E

G

RP

M29F016B

RB

8

DQ0-DQ7

VCC

s

s

s

100,000 PROGRAM/ERASE CYCLES per

BLOCK

20 YEARS DATA RETENTION

鈥?Defectivity below 1 ppm/year

ELECTRONIC SIGNATURE

鈥?Manufacturer Code: 20h

鈥?Device Code: ADh

s

s

VSS

AI02964

March 2000

1/22

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