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M29DW324DT

M29DW324DB

32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block)

3V Supply Flash Memory

FEATURES SUMMARY

s

SUPPLY VOLTAGE

鈥?V

CC

= 2.7V to 3.6V for Program, Erase and

Read

s

s

Figure 1. Packages

鈥?V

PP

=12V for Fast Program (optional)

ACCESS TIME: 70, 90ns

PROGRAMMING TIME

鈥?10碌s per Byte/Word typical

鈥?Double Word/ Quadruple Byte Program

TSOP48 (N)

12 x 20mm

s

MEMORY BLOCKS

鈥?Dual Bank Memory Array: 16Mbit+16Mbit

鈥?Parameter Blocks (Top or Bottom Location)

s

DUAL OPERATIONS

鈥?Read in one bank while Program or Erase in

other

FBGA

s

ERASE SUSPEND and RESUME MODES

鈥?Read and Program another Block during

Erase Suspend

TFBGA63 (ZA)

7 x 11mm

s

UNLOCK BYPASS PROGRAM COMMAND

鈥?Faster Production/Batch Programming

FBGA

s

V

PP

/WP PIN for FAST PROGRAM and WRITE

PROTECT

TEMPORARY BLOCK UNPROTECTION

MODE

COMMON FLASH INTERFACE

鈥?64 bit Security Code

EXTENDED MEMORY BLOCK

鈥?Extra block used as security block or to store

additional information

TFBGA48 (ZE)

6 x 8mm

s

s

s

s

LOW POWER CONSUMPTION

鈥?Standby and Automatic Standby

100,000 PROGRAM/ERASE CYCLES per

BLOCK

ELECTRONIC SIGNATURE

鈥?Manufacturer Code: 0020h

鈥?Top Device Code M29DW324DT: 225Ch

鈥?Bottom Device Code M29DW324DB: 225Dh

s

s

June 2003

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