M28W640CT
M28W640CB
64 Mbit (4Mb x16, Boot Block)
3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY
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SUPPLY VOLTAGE
鈥?V
DD
= 2.7V to 3.6V Core Power Supply
鈥?V
DDQ
= 1.65V to 3.3V for Input/Output
鈥?V
PP
= 12V for fast Program (optional)
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Figure 1. Packages
FBGA
ACCESS TIME
鈥?3.0V to 3.6V: 80ns
鈥?2.7V to 3.6V: 90ns
TFBGA48 (ZB)
8 x 6 ball array
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PROGRAMMING TIME:
鈥?10碌s typical
鈥?Double Word Programming Option
鈥?Quadruple Word Programming Option
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COMMON FLASH INTERFACE
MEMORY BLOCKS
鈥?Parameter Blocks (Top or Bottom location)
鈥?Main Blocks
TSOP48 (N)
12 x 20mm
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BLOCK LOCKING
鈥?All blocks locked at Power Up
鈥?Any combination of blocks can be locked
鈥?WP for Block Lock-Down
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SECURITY
鈥?128 bit user Programmable OTP cells
鈥?64 bit unique device identifier
鈥?One Parameter Block Permanently Lockable
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AUTOMATIC STAND-BY MODE
PROGRAM and ERASE SUSPEND
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
鈥?Manufacturer Code: 20h
鈥?Top Device Code, M28W640CT: 8848h
鈥?Bottom Device Code, M28W640CB: 8849h
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November 2001
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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