M28W160BT
M28W160BB
16 Mbit (1Mb x16, Boot Block) Low Voltage Flash Memory
s
SUPPLY VOLTAGE
鈥?V
DD
= 2.7V to 3.6V: for Program, Erase and
Read
鈥?V
DDQ
= 1.65V or 2.7V: Input/Output option
鈥?V
PP
= 12V: optional Supply Voltage for fast
Program
碌BGA
s
ACCESS TIME
鈥?2.7V to 3.6V: 90ns
鈥?2.7V to 3.6V: 100ns
s
PROGRAMMING TIME:
鈥?10碌s typical
鈥?Double Word Programming Option
TSOP48 (N)
12 x 20mm
碌BGA46 (GB)
8 x 6 solder balls
s
s
PROGRAM/ERASE CONTROLLER (P/E.C.)
COMMON FLASH INTERFACE
鈥?64 bit Security Code
MEMORY BLOCKS
鈥?Parameter Blocks (Top or Bottom location)
鈥?Main Blocks
Figure 1. Logic Diagram
s
s
BLOCK PROTECTION on TWO PARAMETER
BLOCKS
鈥?WP for Block Protection
20
A0-A19
W
E
G
RP
WP
VDD VDDQ VPP
16
DQ0-DQ15
s
s
s
AUTOMATIC STAND-BY MODE
PROGRAM and ERASE SUSPEND
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS of DATA RETENTION
鈥?Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
鈥?Manufacturer Code: 20h
鈥?Top Device Code, M28W160BT: 90h
鈥?Bottom Device Code, M28W160BB: 91h
s
M28W160BT
M28W160BB
s
VSS
AI02628
May 2000
1/39