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M28F201-120XK1R Datasheet

  • M28F201-120XK1R

  • 2 Mb 256K x 8, Chip Erase FLASH MEMORY

  • 21頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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M28F201
2 Mb (256K x 8, Chip Erase) FLASH MEMORY
5V
鹵
10% SUPPLY VOLTAGE
12V PROGRAMMING VOLTAGE
FAST ACCESS TIME: 70ns
BYTE PROGRAMMING TIME: 10碌s typical
ELECTRICAL CHIP ERASE in 1s RANGE
LOW POWER CONSUMPTION
鈥?Active Current: 15mA typical
鈥?Stand-by Current: 10碌A(chǔ) typical
10,000 PROGRAM/ERASE CYCLES
INTEGRATED ERASE/PROGRAM-STOP
TIMER
OTP COMPATIBLE PACKAGES and PINOUTS
ELECTRONIC SIGNATURE
鈥?Manufacturer Code: 20h
鈥?Device Code: F4h
DESCRIPTION
The M28F201 FLASH Memory product is a non-
volatile memories which may be erased electrically
at the chip level and programmed byte-by-byte. It
is organised as 256K bytes. It uses a command
register architecture to select the operating modes
and thus provide a simple microprocessor inter-
face. The M28F201 FLASH Memory product is
suitable for applications where the memory has to
be reprogrammed in the equipment. The access
time of 70ns makes the device suitable for use in
high speed microprocessor systems.
PLCC32 (K)
TSOP32 (N)
8 x 20 mm
Figure 1. Logic Diagram
VCC
VPP
18
A0-A17
8
DQ0-DQ7
W
E
M28F201
Table 1. Signal Names
A0-A17
DQ0-DQ7
E
G
W
V
PP
V
CC
V
SS
April 1997
Address Inputs
Data Inputs / Outputs
Chip Enable
Output Enable
Write Enable
Program Supply
Supply Voltage
Ground
G
VSS
AI00637C
1/21

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