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M28F101-200XP1 Datasheet

  • M28F101-200XP1

  • 1 Mb 128K x 8, Chip Erase FLASH MEMORY

  • 23頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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M28F101
1 Mb (128K x 8, Chip Erase) FLASH MEMORY
5V
鹵10%
SUPPLY VOLTAGE
12V PROGRAMMING VOLTAGE
FAST ACCESS TIME: 70ns
BYTE PROGRAMING TIME: 10碌s typical
ELECTRICAL CHIP ERASE in 1s RANGE
LOW POWER CONSUMPTION
鈥?Stand-by Current: 100碌A(chǔ) max
10,000 ERASE/PROGRAM CYCLES
INTEGRATED ERASE/PROGRAM-STOP
TIMER
OTP COMPATIBLE PACKAGES and PINOUTS
ELECTRONIC SIGNATURE
鈥?Manufacturer Code: 20h
鈥?Device Code: 07h
DESCRIPTION
The M28F101 FLASH Memory is a non-volatile
memory which may be erased electrically at the
chip level and programmed byte-by-byte. It is or-
ganised as 128K bytes of 8 bits. It uses a command
register architecture to select the operating modes
and thus provides a simple microprocessor inter-
face. The M28F101 FLASH Memory is suitable for
applications where the memory has to be repro-
grammed in the equipment. The access time of
70ns makes the device suitable for use in high
speed microprocessor systems.
32
1
PDIP32 (P)
PLCC32 (K)
TSOP32 (N)
8 x 20 mm
Figure 1. Logic Diagram
VCC
VPP
17
A0-A16
8
DQ0-DQ7
Table 1. Signal Names
A0-A16
DQ0-DQ7
E
G
W
V
PP
V
CC
V
SS
April 1997
Address Inputs
Data Inputs / Outputs
Chip Enable
Output Enable
Write Enable
Program Supply
Supply Voltage
Ground
W
E
G
M28F101
VSS
AI00666B
1/23

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