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M28256-90BS1T Datasheet

  • M28256-90BS1T

  • 256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protecti...

  • 21頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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M28256
256 Kbit (32Kb x8) Parallel EEPROM
with Software Data Protection
PRELIMINARY DATA
FAST ACCESS TIME:
鈥?90ns at 5V
鈥?120ns at 3V
SINGLE SUPPLY VOLTAGE:
鈥?5V
鹵
10% for M28256
鈥?2.7V to 3.6V for M28256-xxW
LOW POWER CONSUMPTION
FAST WRITE CYCLE:
鈥?64 Bytes Page Write Operation
鈥?Byte or Page Write Cycle
ENHANCED END of WRITE DETECTION:
鈥?Data Polling
鈥?Toggle Bit
STATUS REGISTER
HIGH RELIABILITY DOUBLE POLYSILICON,
CMOS TECHNOLOGY:
鈥?Endurance >100,000 Erase/Write Cycles
鈥?Data Retention >10 Years
JEDEC APPROVED BYTEWIDE PIN OUT
ADDRESS and DATA LATCHED ON-CHIP
SOFTWARE DATA PROTECTION
28
1
PDIP28 (BS)
PLCC32 (KA)
28
1
SO28 (MS)
300 mils
TSOP28 (NS)
8 x13.4mm
Figure 1. Logic Diagram
VCC
DESCRIPTION
The M28256 and M28256-Ware 32K x8 low power
Parallel EEPROM fabricatedwith STMicroelectron-
ics proprietary double polysilicon CMOS technol-
ogy.
Table 1. Signal Names
A0-A14
DQ0-DQ7
W
E
G
V
CC
V
SS
Address Input
Data Input / Output
Write Enable
Chip Enable
Output Enable
Supply Voltage
Ground
15
A0-A14
8
DQ0-DQ7
W
E
G
M28256
VSS
AI01885
January 1999
This is preliminary information on a new product now in developmentor undergoing evaluation . Detail s are subject to change without notice.
1/21

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