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M27W401

4 Mbit (512Kb x 8) Low Voltage UV EPROM and OTP EPROM

s

2.7V to 3.6V LOW VOLTAGE in READ

OPERATION

ACCESS TIME:

鈥?70ns at V

CC

= 3.0V to 3.6V

鈥?80ns at V

CC

= 2.7V to 3.6V

32

s

32

s

s

PIN COMPATIBLE with M27C4001

LOW POWER CONSUMPTION:

鈥?15碌A(chǔ) max Standby Current

鈥?15mA max Active Current at 5MHz

1

1

FDIP32W (F)

PDIP32 (B)

s

s

PROGRAMMING TIME 100碌s/byte

HIGH RELIABILITY CMOS TECHNOLOGY

鈥?2,000V ESD Protection

鈥?200mA Latchup Protection Immunity

PLCC32 (K)

TSOP32 (N)

8 x 20 mm

s

ELECTRONIC SIGNATURE

鈥?Manufacturer Code: 20h

鈥?Device Code: 41h

Figure 1. Logic Diagram

DESCRIPTION

The M27W401 is a low voltage 4 Mbit EPROM of-

fered in the two ranges UV (ultra violet erase) and

OTP (one time programmable). It is ideally suited

for microprocessor systems requiring large data or

program storage and is organised as 524,288 by 8

bits.

The M27W401 operates in the read mode with a

supply voltage as low as 2.7V at 鈥?0 to 85擄C tem-

perature range. The decrease in operating power

allows either a reduction of the size of the battery

or an increase in the time between battery re-

charges.

The FDIP32W (window ceramic frit-seal package)

has a transparent lid which allows the user to ex-

pose the chip to ultraviolet light to erase the bit pat-

tern. A new pattern can then be written to the

device by following the programming procedure.

For application where the content is programmed

only one time and erasure is not required, the

M27W401 is offered in PDIP32, PLCC32 and

TSOP32 (8 x 20 mm) packages.

VCC

VPP

19

A0-A18

8

Q0-Q7

E

G

M27W401

VSS

AI01590

March 2000

1/15

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