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M27W102

1 Mbit (64Kb x16) Low Voltage UV EPROM and OTP EPROM

s

2.7V to 3.6V LOW VOLTAGE in READ

OPERATION

READ ACCESS TIME:

鈥?70ns at V

CC

= 3.0V to 3.6V

鈥?80ns at V

CC

= 2.7V to 3.6V

40

40

s

s

s

PIN COMPATIBLE with M27C1024

LOW POWER CONSUMPTION:

鈥?15碌A(chǔ) max Standby Current

鈥?15mA max Active Current at 5MHz

1

1

FDIP40W (F)

PDIP40 (B)

s

s

PROGRAMMING TIME 100碌s/word

HIGH RELIABILITY CMOS TECHNOLOGY

鈥?2,000V ESD Protection

鈥?200mA Latchup Protection Immunity

PLCC44 (K)

s

ELECTRONIC SIGNATURE

鈥?Manufacturer Code: 0020h

鈥?Device Code: 008Ch

Figure 1. Logic Diagram

TSOP40 (N)

10 x 14 mm

DESCRIPTION

The M27W102 is a low voltage 1 Mbit EPROM of-

fered in the two ranges UV (ultra violet erase) and

OTP (one time programmable). It is ideally suited

for microprocessor systems requiring large data or

program storage and is organized as 65,536

words by 16 bits.

The M27W102 operates in the read mode with a

supply voltage as low as 2.7V at 鈥?0 to 85擄C tem-

perature range. The decrease in operating power

allows either a reduction of the size of the battery

or an increase in the time between battery re-

charges.

The FDIP40W (window ceramic frit-seal package)

has a transparent lid which allows the user to ex-

pose the chip to ultraviolet light to erase the bit pat-

tern. A new pattern can then be written to the

device by following the programming procedure.

For application where the content is programmed

only one time and erasure is not required, the

M27w102 is offered in PDIP40, PLCC44 and

TSOP40 (10 x 14 mm) packages.

VCC

VPP

16

A0-A15

16

Q0-Q15

P

E

G

M27W102

VSS

AI01922

April 2000

1/15

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