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M27W101

1 Mbit (128Kb x8) Low Voltage UV EPROM and OTP EPROM

s

2.7V to 3.6V LOW VOLTAGE in READ

OPERATION

ACCESS TIME:

鈥?70ns at V

CC

= 3.0V to 3.6V

鈥?80ns at V

CC

= 2.7V to 3.6V

32

32

s

s

s

PIN COMPATIBLE with M27C1001

LOW POWER CONSUMPTION:

鈥?Active Current 15mA at 5MHz

鈥?Standby Current 15碌A(chǔ)

1

1

FDIP32W (F)

PDIP32 (B)

s

s

PROGRAMMING TIME 100碌s/byte

HIGH RELIABILITY CMOS TECHNOLOGY

鈥?2,000V ESD Protection

鈥?200mA Latchup Protection Immunity

PLCC32 (K)

TSOP32 (N)

8 x 20 mm

s

ELECTRONIC SIGNATURE

鈥?Manufacturer Code: 20h

鈥?Device Code: 05h

Figure 1. Logic Diagram

DESCRIPTION

The M27W101 is a low voltage 1 Mbit EPROM of-

fered in two range UV (ultra violet erase) and OTP

(one time programmable). It is ideally suited for mi-

croprocessor systems requiring large data or pro-

gram storage and is organized as 131,072 by 8

bits.

The M27W101 operates in the read mode with a

supply voltage as low as 2.7V at 鈥?0 to 85

擄C

tem-

perature range.

The decrease in operating power allows either a

reduction of the size of the battery or an increase

in the time between battery recharges.

The FDIP32W (window ceramic frit-seal package)

has a transparent lid which allows the user to ex-

pose the chip to ultraviolet light to erase the bit pat-

tern. A new pattern can then be written to the

device by following the programming procedure.

For application where the content is programmed

only one time and erasure is not required, the

M27W101 is offered in PDIP32, PLCC32 and

TSOP32 (8 x 20 mm) packages.

VCC

VPP

17

A0-A16

8

Q0-Q7

P

E

G

M27W101

VSS

AI01587

April 2000

1/15

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