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M27V400

4 Mbit (512Kb x8 or 256Kb x16) UV EPROM and OTP EPROM

NOT FOR NEW DESIGN

s

s

M27V400 is replaced by the M27W400

3V to 3.6V LOW VOLTAGE in READ

OPERATION

ACCESS TIME: 100ns

BYTE-WIDE or WORD-WIDE

CONFIGURABLE

4 Mbit MASK ROM REPLACEMENT

LOW POWER CONSUMPTION

鈥?Active Current 30mA at 8MHz

鈥?Stand-by Current 20碌A(chǔ)

40

40

s

s

s

s

1

1

FDIP40W (F)

PDIP40 (B)

s

s

s

PROGRAMMING VOLTAGE: 12.5V 鹵 0.25V

PROGRAMMING TIME: 50碌s/word

ELECTRONIC SIGNATURE

鈥?Manufacturer Code: 20h

鈥?Device Code: B8h

Figure 1. Logic Diagram

DESCRIPTION

The M27V400 is an 4 Mbit EPROM offered in the

two ranges UV (ultra violet erase) and OTP (one

time programmable). It is ideally suited for micro-

processor systems requiring large data or program

storage. It is organised as either 512 Kwords of 8

bit or 256 Kwords of 16 bit. The pin-out is compat-

ible with the most common 4 Mbit Mask ROM.

The FDIP40W (window ceramic frit-seal package)

has a transparent lid which allows the user to ex-

pose the chip to ultraviolet light to erase the bit pat-

tern.

A new pattern can then be written rapidly to the de-

vice by following the programming procedure.

For applications where the content is programmed

only one time and erasure is not required, the

M27V400 is offered in PDIP40 package.

VCC

18

A0-A17

15

Q15A鈥?

Q0-Q14

E

G

BYTEVPP

M27C400

VSS

AI01634

July 2000

This is information on a product still in production but not recommended for new designs.

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