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M27512-25F6 Datasheet

  • M27512-25F6

  • NMOS 512K 64K x 8 UV EPROM

  • 92.98KB

  • 11頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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M27512
NMOS 512 Kbit (64Kb x 8) UV EPROM
NOT FOR NEW DESIGN
s
s
s
s
s
FAST ACCESS TIME: 200ns
EXTENDED TEMPERATURE RANGE
SINGLE 5V SUPPLY VOLTAGE
LOW STANDBY CURRENT: 40mA max
TTL COMPATIBLE DURING READ and
PROGRAM
FAST PROGRAMMING ALGORITHM
ELECTRONIC SIGNATURE
PROGRAMMING VOLTAGE: 12V
1
28
s
s
s
DESCRIPTION
The M27512 is a 524,288 bit UV erasable and
electrically programmable memory EPROM. It is
organized as 65,536 words by 8 bits.
The M27512 is housed in a 28 Pin Window Ce-
ramic Frit-Seal Dual-in-Line package. The trans-
parent lid allows the user to expose the chip to
ultraviolet light to erase the bit pattern. A new pat-
tern can then be written to the device by following
the programming procedure.
FDIP28W (F)
Figure 1. Logic Diagram
VCC
16
A0-A15
8
Q0-Q7
E
GVPP
M27512
VSS
AI00765B
November 2000
This is information on a product still in production but not recommended for new designs.
1/11

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