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LX5512E-LQ Datasheet

  • LX5512E-LQ

  • InGaP HBT 2.4 - 2.5 GHz Power Amplifier

  • 10頁

  • MICROSEMI

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LX5512E
TM
廬
InGaP HBT 2.4 鈥?2.5 GHz Power Amplifier
P
RODUCTION
D
ATA
S
HEET
DESCRIPTION
KEY FEATURES
Advanced InGaP HBT
2.4 鈥?2.5GHz Operation
Single-Polarity 3.3V Supply
Low Quiescent Current Icq
~50mA
Power Gain ~34dB @ 2.45GHz
and Pout = 19dBm
Total Current 130mA for Pout =
19dBm @ 2.45GHz OFDM
EVM ~ 3.0% for 64QAM /
54Mbps and Pout = 19dBm
Small Footprint (3 x 3 mm
2
)
Low Profile (0.9mm)
APPLICATIONS
The LX5512E is a power amplifier
optimized for WLAN applications in
the 2.4-2.5 GHz frequency range. The
PA is implemented as a three-stage
monolithic microwave integrated
circuit (MMIC) with active bias and
input/output pre-matching. The device
is manufactured with an InGaP/GaAs
Heterojunction Bipolar Transistor
(HBT) IC process (MOCVD). It
operates at a single low voltage supply
of 3.3V with 34 dB power gain
between 2.4-2.5GHz, at a low
quiescent current of 50 mA.
For 19dBm OFDM output power
(64QAM, 54Mbps), the PA provides a
low EVM (Error-Vector Magnitude) of
3 %, and consumes 130 mA total DC
current.
The LX5512E is available in a 16-pin
3mmx3mm micro-lead package (MLP).
The compact footprint, low profile, and
excellent thermal capability of the MLP
package makes the LX5512E an ideal
solution for high-gain power amplifier
requirements for IEEE 802.11b/g
applications
.
WWW .
Microsemi
.C
OM
IMPORTANT:
For the most current data, consult
MICROSEMI鈥檚
website:
http://www.microsemi.com
IEEE 802.11b/g
PRODUCT HIGHLIGHT
LX5512E
LX5512E
PACKAGE ORDER INFO
Plastic MLPQ
LQ
16 pin
LX5512E-LQ
Note: Available in Tape & Reel.
Append the letter 鈥淭鈥?to the part number.
(i.e. LX5512E-LQT)
Copyright
錚?/div>
2000
Rev. 1.2, 2004-01-16
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1

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