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LX5510-LQ Datasheet

  • LX5510-LQ

  • InGaP HBT 2.4-2.5 GHz Power Amplifier

  • 7頁

  • MICROSEMI

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C
O N F I D E N T I A L
LX5510
I N T E G R A T E D
P R O D U C T S
InGaP HBT 2.4 鈥?2.5 GHz Power Amplifier
P
RELIMINARY
D
ATA
S
HEET
DESCRIPTION
KEY FEATURES
Advanced InGaP HBT
2.4 鈥?2.5GHz Operation
Single-Polarity 3.3V Supply
Low Quiescent Current Icq
~65mA
Power Gain ~20dB @ 2.45GHz
and Pout = 19dBm
Total Current 120mA for Pout =
19dBm @ 2.45GHz OFDM
EVM ~ 3.0% for 64QAM /
54Mbps and Pout = 19dBm
Small Footprint (3x3mm
2
)
Low Profile (0.9mm)
APPLICATIONS
The LX5510 is a power amplifier
optimized for WLAN applications in
the 2.4-2.5GHz frequency range. The
PA is implemented as a two-stage
monolithic microwave integrated
circuit (MMIC) with active bias and
input/output pre-matching.
The device is manufactured with an
InGaP/GaAs Heterojunction Bipolar
Transistor
(HBT)
IC
process
(MOCVD). With single low voltage
supply of 3.3V 20dB power gain
between 2.4-2.5GHz, at a low
quiescent current of 65mA.
For +19dBm OFDM output power
(64QAM, 54Mbps), the PA provides a
low EVM (Error-Vector Magnitude) of
3.0%, and consumes 120mA total DC
current with the nominal 3.3V bias.
With increased bias of 4.5V EVM is ~
5% at 23dBm.
The LX5510 is available in a 16-pin
3mmx3mm micro-lead package (MLP).
The compact footprint, low profile, and
excellent thermal capability of the MLP
package makes the LX5510 an ideal
solution for medium-gain power
amplifier requirements for IEEE
802.11b/g applications
WWW .
Microsemi
.C
OM
IMPORTANT:
For the most current data, consult
MICROSEMI鈥檚
website:
http://www.microsemi.com
IEEE 802.11b/g
PRODUCT HIGHLIGHT
PACKAGE ORDER
INFO
LX5510
LX5510
Plastic MLPQ
LQ
16 pin
LX5510-LQ
Note: Available in Tape & Reel.
Append the letter 鈥淭鈥?to the part number.
(i.e. LX5510-LQT)
Copyright
錚?/div>
2003
Rev. 0.3g, 2003-05-08
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1

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