鈩?/div>
Gain-Bandwidth Product: 5.3MHz Typ
Guaranteed Specifications with
鹵5V
Supplies
Guaranteed Matching Specifications
APPLICATI
s
s
s
s
S
s
s
Photocurrent Amplifiers
Hydrophone Amplifiers
High Sensitivity Piezoelectric Accelerometers
Low Voltage and Current Noise Instrumentation
Amplifier Front Ends
Two and Three Op Amp Instrumentation Amplifiers
Active Filters
The LT1169 achieves a new standard of excellence in noise
performance for a dual JFET op amp. For the first time low
voltage noise (6nV/鈭欻z) is simultaneously offered with
extremely low current noise (1fA/鈭欻z), providing the low-
est total noise for high impedance transducer applications.
Unlike most JFET op amps, the very low input bias current
(5pA Typ) is maintained over the entire common mode
range which results in an extremely high input resistance
(10
13
鈩?.
When combined with a very low input capaci-
tance (1.5pF) an extremely high input impedance results,
making the LT1169 the first choice for amplifying low level
signals from high impedance transducers. The low input
capacitance also assures high gain linearity when buffering
AC signals from high impedance transducers.
The LT1169 is unconditionally stable for gains of 1 or more,
even with 1000pF capacitive loads. Other key features are
0.6mV V
OS
and a voltage gain over 4 million. Each indi-
vidual amplifier is 100% tested for voltage noise, slew rate
(4.2V/碌s), and gain-bandwidth product (5.3MHz).
The LT1169 is offered in the S8 and N8 packages.
A full set of matching specifications are provided for
precision instrumentation amplifier front ends. Specifica-
tions at
鹵5V
supply operation are also provided. For an
even lower voltage noise please see the LT1113 data sheet.
, LTC and LT are registered trademarks of Linear Technology Corporation.
TYPICAL APPLICATI
Low Noise Light Sensor with DC Servo
C1
2pF
TOTAL 1kHz VOLTAGE NOISE DENSITY (nV/
鈭欻z)
10k
D2
1N914
C
D
D1
1N914
2N3904
HAMAMATSU
S1336-5BK
(908) 231-0960
V鈥?/div>
R5
10k
R4
1k
R3
1k
7
1/2 LT1169
5
4
鈥揤
R2C2 > C1R1
C
D
= PARASITIC PHOTODIODE CAPACITANCE
V
OUT
= 100mV/碌WATT FOR 200nm WAVE LENGTH
330mV/碌WATT FOR 633nm WAVE LENGTH
鈥?/div>
+
+
3
鈥?/div>
2
R1
1M
1
C2
0.022碌F
+V
8
V
OUT
1k
1/2 LT1169
100
6
R2
100k
10
1
100
LT1169 鈥?TA01
U
1kHz Output Voltage Noise
Density vs Source Resistance
鈥?/div>
+
R
SOURCE
V
N
UO
UO
V
N
SOURCE
RESISTANCE
ONLY
1k
T
A
= 25擄C
V
S
= 鹵15V
10k 100k 1M 10M 100M 1G
SOURCE RESISTANCE (鈩?
V
N
=
鈭?/div>
(V
OP AMP
)
2
+ 4kTR
S
+ 2qI
B
R
S2
LT1169 鈥?TA02
1
LT1169CN8相關(guān)型號PDF文件下載
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