LT1160/LT1162
Half-/Full-Bridge
N-Channel
Power MOSFET Drivers
FEATURES
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DESCRIPTION
The LT
廬
1160/LT1162 are cost effective half-/full-bridge
N-channel power MOSFET drivers. The floating driver can
drive the topside N-channel power MOSFETs operating off
a high voltage (HV) rail of up to 60V.
The internal logic prevents the inputs from turning on the
power MOSFETs in a half-bridge at the same time. Its
unique adaptive protection against shoot-through cur-
rents eliminates all matching requirements for the two
MOSFETs. This greatly eases the design of high efficiency
motor control and switching regulator systems.
During low supply or start-up conditions, the undervoltage
lockout actively pulls the driver outputs low to prevent the
power MOSFETs from being partially turned on. The 0.5V
hysteresis allows reliable operation even with slowly vary-
ing supplies.
The LT1162 is a dual version of the LT1160 and is available
in a 24-pin PDIP or in a 24-pin SO Wide package.
, LTC and LT are registered trademarks of Linear Technology Corporation.
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Floating Top Driver Switches Up to 60V
Drives Gate of Top N-Channel MOSFET
above Load HV Supply
180ns Transition Times Driving 10,000pF
Adaptive Nonoverlapping Gate Drives Prevent
Shoot-Through
Top Drive Protection at High Duty Cycles
TTL/CMOS Input Levels
Undervoltage Lockout with Hysteresis
Operates at Supply Voltages from 10V to 15V
Separate Top and Bottom Drive Pins
APPLICATIONS
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PWM of High Current Inductive Loads
Half-Bridge and Full-Bridge Motor Control
Synchronous Step-Down Switching Regulators
3-Phase Brushless Motor Drive
High Current Transducer Drivers
Class D Power Amplifiers
TYPICAL APPLICATION
1N4148
HV = 60V MAX
+
12V
1
SV
+
BOOST
T GATE DR
T GATE FB
14
13
12
11
IRFZ44
1000碌F
100V
+
10碌F
25V
10
PV
+
+
4
C
BOOST
1碌F
UV OUT
T SOURCE
LT1160
2
PWM
0Hz TO 100kHz
3
IN TOP
IN BOTTOM
SGND
5
B GATE DR
B GATE FB
PGND
6
9
8
IRFZ44
IN TOP IN BOTTOM T GATE DR B GATE DR
L
L
H
H
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H
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H
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H
L
L
1160 TA01
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