鈥?/div>
+27 dBm Typical Power at 15 GHz
11 dB Typical Power Gain at 15 GHz
Low Intermodulation Distortion
50% Power-Added-Efficiency
Color-coded by I
DSS
range
SOURCE
DRAIN
DESCRIPTION AND APPLICATIONS
The LP6872P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic
High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25
碌m
by 720
碌m
Schottky barrier
gate. The recessed 鈥渕ushroom鈥?gate structure minimizes parasitic gate-source and gate resistances. The epitaxial
structure and processing have been optimized for reliable high-power applications. The LP6872 also features Si
3
N
4
passivation and is available in die form.
Typical applications include commercial and military high-performance power amplifiers, including SATCOM uplink
transmitters, and medium-haul digital radio transmitters. Space level screening to FSS JANS grade is also available.
The LP6872-P100 may be procured in a variety of grades, depending upon specific user requirements. Standard lot
screening is patterned after MIL-STD-19500, JANC grade.
PERFORMANCE SPECIFICATIONS (T
A
= 25擄C)
SYMBOLS
I
DSS
PARAMETERS
Saturated Drain-Source Current
V
DS
= 2V V
GS
= 0V
LP6872-P100-1 BLUE
LP6872-P100-2 GREEN
LP6872-P100-3 RED
Output Power at 1dB Gain Compression
f
= 15 GHz
V
DS
= 8.0V, I
DS
= 50% I
DSS
Power Gain at 1dB Gain Compression
f
= 15 GHz
V
DS
= 8.0V, I
DS
= 50% I
DSS
Power-Added Efficiency
Maximum Drain-Source Current
V
DS
= 2V V
GS
= +1V
Transconductance
V
DS
= 2V V
GS
= 0V
Pinch-Off Voltage
V
DS
= 2V I
DS
= 4mA
Gate-Source Leakage Current
V
GS
= -5V
Gate-Source Breakdown Voltage
I
GS
= 4mA
Gate-Drain Breakdown Voltage
I
GD
= 4mA
MIN
180
207
234
25.5
8.0
TYP
195
220
245
27.0
9.5
50
385
220
-1.2
10
-15
-16
MAX
206
233
260
UNITS
mA
P
1dB
G
1dB
畏
ADD
I
MAX
G
M
V
P
I
GSO
BV
GS
BV
GD
dBm
dB
%
mA
mS
V
碌A(chǔ)
V
V
170
-0.25
-12
-12
-2.0
50
Get Package Model
DSS-033 WF
Phone:
(408) 988-1845
Internet:
http://www.filtronicsolidstate.com
Fax:
(408) 970-9950
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