LP2975 MOSFET LDO Driver/Controller
September 1997
LP2975
MOSFET LDO Driver/Controller
General Description
A high-current LDO regulator is simple to design with the
LP2975 LDO Controller. Using an external P-FET, the
LP2975 will deliver an ultra low dropout regulator with ex-
tremely low quiescent current.
High open loop gain assures excellent regulation and ripple
rejection performance.
The trimmed internal bandgap reference provides precise
output voltage over the entire operating temperature range.
Dropout voltage is 鈥渦ser selectable鈥?by sizing the external
FET: the minimum input-output voltage required for opera-
tion is the maximum load current multiplied by the R
DS
(ON)
of the FET.
Overcurrent protection of the external FET is easily imple-
mented by placing a sense resistor in series with V
IN
. The
57 mV detection threshold of the current sense circuitry mini-
mizes dropout voltage and power dissipation in the resistor.
The standard product versions available provide output volt-
ages of 12V, 5V, or 3.3V with guaranteed 25藲C accuracy of
1.5% (鈥淎鈥?grade) and 2.5% (standard grade).
Features
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Simple to use, few external components
Ultra-small mini SO-8 package
1.5% (A grade) precision output voltage
Low-power shutdown input
<
1 碌A in shutdown
Low operating current (180 碌A typical
@
V
IN
= 5V)
Wide supply voltage range (1.8V to 24V)
Built-in current limit amplifier
Overtemperature protection
12V, 5V, and 3.3V standard output voltages
Can be programmed using external divider
鈭?0藲C to +125藲C junction temperature range
Applications
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High-current 5V to 3.3V regulator
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Post regulator for switching converter
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Current-limited switch
Block Diagram
Connection Diagram
Surface Mount Mini SO-8 Package
DS100034-2
Top View
For Order Numbers
See
Table 1
of this Document
See NS Package Number MUA08A
DS100034-1
*R
SET
values are: 208k for 12V part, 72.8k for 5V part, and 39.9k for 3.3V
part.
漏 1999 National Semiconductor Corporation
DS100034
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