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LP1500SOT2233 Datasheet

  • LP1500SOT2233

  • Low Noise, High Linearity Packaged PHEMT

  • 2頁

  • FILTRONIC

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Filtronic
Solid State
FEATURES
LP1500SOT223
Low Noise, High Linearity Packaged PHEMT
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
+27 dBm Typical Power at 1800 MHz
15 dB Typical Power Gain at 1800 MHz
1.0 dB Typical Noise Figure
+42 dBm Typical Intercept Point
Color-coded by I
DSS
range
GATE
SOURCE
SOURCE
DRAIN
(TOP VIEW)
DESCRIPTION AND APPLICATIONS
The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25
碌m
by 1500
碌m
Schottky barrier gate. The recessed 鈥渕ushroom鈥?gate structure minimizes parasitic gate-source and gate resistances.
The epitaxial structure and processing have been optimized for reliable high-power applications. The LP1500 also
features Si
3
N
4
passivation and is available in a die form or in a flanged ceramic package (P100) for high-power
applications, or in the SOT-89 plastic package.
Typical applications include PCS/Cellular low-voltage high-efficiency output amplifiers, and general purpose power
amplifiers. The LP 1500 may be procured in a variety of grades, depending upon specific user requirements. Standard lot
screening is patterned after MIL-STD-19500, JANC grade.
PERFORMANCE SPECIFICATIONS (T
A
= 25擄C)
SYMBOLS
I
DSS
P
1dB
G
1dB
NF
IP3
I
MAX
G
M
V
P
I
GSO
BV
GS
BV
GD
LP1500-SOT223-1 BLUE
LP1500-SOT223-2 GREEN
LP1500-SOT223-3 RED
Output Power at 1dB Gain Compression
f
= 1800 Mhz
V
DS
= 3.3V, I
DS
= 33% I
DSS
Power Gain at 1dB Gain Compression
f
= 1800 MHz
V
DS
= 3.3V, I
DS
= 33% I
DSS
Noise Figure
V
DS
= 3.3V, I
DS
= 33% I
DSS
,
f
= 1.8 GHz
Output Intercept Point V
DS
= 3.3V, I
DS
= 33% I
DSS
,
f
= 1.8 GHz
Maximum Drain-Source Current
V
DS
= 2V V
GS
= +1V
Transconductance
V
DS
= 2V V
GS
= 0V
Pinch-Off Voltage
V
DS
= 2V I
DS
= 5mA
Gate-Source Leakage Current
V
GS
= -3V
Gate-Source Breakdown Voltage
I
GS
= 8mA
Gate-Drain Breakdown Voltage
I
GD
= 8mA
PARAMETERS
Saturated Drain-Source Current
V
DS
= 2V V
GS
= 0V
MIN
375
451
527
25.0
13.5
TYP
420
490
560
27.0
15.0
1.0
42
925
400
-1.2
10
-10
-11
MAX
450
526
600
UNITS
mA
dBm
dB
dB
dBm
mA
mS
V
碌A(chǔ)
V
V
300
-0.25
-8
-8
-2.0
75
DSS-026 WF
Phone:
(408) 988-1845
Internet:
http://www.filtronicsolidstate.com
Fax:
(408) 970-9950

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