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LN66A Datasheet

  • LN66A

  • GaAs infrared light emitting diode For optical control syste...

  • 4頁

  • PANASONIC

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Infrared Light Emitting Diodes
LNA2902L
(LN66A(L))
GaAs infrared light emitting diode
Unit: mm
Not soldered 2.0 max.
For optical control systems
I
Features
鈥?/div>
High-power output, high-efficiency: I
e
=
9 mW/sr (min.)
鈥?/div>
Emitted light spectrum is suited for silicon photodetectors
鈥?/div>
Good radiant power output linearity with respect to input current
鈥?/div>
Wide directivity:
胃 =
20擄 (typ.)
鈥?/div>
Transparent epoxy resin package
鈥?/div>
Long lead-wire type
7.65鹵0.2
蠁5.0鹵0.2
蠁6.0鹵0.2
1.0
24.1鹵1
5.05鹵0.3
1.5
2-0.8 max.
2-0.5鹵0.15
0.5鹵0.15
(1.5)
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
*
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
Symbol
P
D
I
F
I
FP
V
R
T
opr
T
stg
Rating
160
100
1.5
3
鈭?5
to
+85
鈭?0
to
+100
Unit
mW
mA
A
V
擄C
擄C
蠁6.0鹵0.2
1
2
0.5鹵0.15
I
Absolute Maximum Ratings
T
a
=
25擄C
2.54
1: Anode
2: Cathode
Note) *: Less than f
=
100 Hz, duty cycle
=
0.1%
I
Electro-Optical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Radiant intensity
Total power output
Peak emission wavelength
Spectral band width
Forward voltage
Pulse forward voltage
*1
Reverse current
Total capacitance between terminals
Beal angle at 50% axial intensity
Cut-off frequency
*2
Symbol
I
e
P
O
位
P
鈭單?/div>
V
F
V
FP
I
R
C
t
胃
f
C
I
F
=
50 mA
I
F
=
50 mA
I
F
=
50 mA
I
F
=
50 mA
I
F
=
100 mA
I
FP
=
1.0 A
V
R
=
3 V
V
R
=
0 V, f
=
1 MHz
The angle when the beam intensity is
halved.
35
20
1
Conditions
Min
9.0
12.0
950
50
1.4
1.6
3.0
10
Typ
Max
Unit
mW/sr
mW
nm
nm
V
V
碌A(chǔ)
pF
擄
MHz
Note) *1: Less than f
=
100 Hz, duty cycle
=
0.1%
P
O
at f
=
f
C
*2: Cut-off frequency
f
C
: 10
脳
log
= 鈭?
P
O
at f
=
50 kHz
Note) The part number in the parenthesis shows conventional part number.
Publication date: October 2001
SHC00039AED
1

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