LMX2119 1 9 GHz Power Amplifier
PRELIMINARY
June 1996
LMX2119 1 9 GHz Power Amplifier
General Description
The LMX2119 1 9 GHz Power Amplifier is a monolithic inte-
grated power amplifier suitable for use in the Digital Europe-
an Cordless Telecommunications (DECT) system as well as
other mobile telephony and wireless communications appli-
cations It is fabricated using an advanced Gallium Arsenide
technology that allows single supply (
a
3V) operation
The LMX2119 consists of two MESFETs cascaded to pro-
vide 24 5 dB of power gain The output power at 3 6V is
a
26 5 dBm with an input power level of
a
2 dBm The input
VSWR of the power amplifier remains constant in the ON
and OFF state
The LMX2119 is available in a 16-pin SOIC surface mount
plastic package
Features
Y
Y
Y
Y
Y
Single
a
3V supply operation
Class A bias
l
30% power added efficiency
24 5 dB power gain
a
26 5 dBm output power
50X input output impedance
350 mA current consumption at
a
3 6V
Applications
Y
Y
Y
Y
Digital European Cordless Telecommunications (DECT)
Portable wireless communications (PCS PCN cordless)
Wireless local area networks (WLANs)
Other wireless communications systems
Functional Block Diagram
TL W 12686 鈥?1
This data sheet contains the design specifications for product development
Specifications may change in any manner without notice
C
1996 National Semiconductor Corporation
TL W 12686
RRD-B30M27 Printed in U S A
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